VISHAY SIRB40DP-T1-GE3

Type of transistor

N-MOSFET x2

Polarisation

unipolar

Drain-source voltage

40V

Drain current

40A

Pulsed drain current

100A

Case

PowerPAK® SO8

Gate-source voltage

-16...20V

Mounting

SMD

Kind of package1

tape

Kind of package

reel

Kind of channel

enhanced

Gross weight

1g

Certificates

RoHS compliant

Power dissipation

29.6W

Gate charge

93nC

On-state resistance

4.2mΩ