Vishay Intertechnologies SI2333DDS-T1-GE3
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SI2333DDS-T1-GE3
2668-SI2333DDS-T1-GE3
晶体管 - 特殊用途
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大陆
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Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
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SI2333DDS-T1-GE3详情
Vishay Intertechnologies SI2333DDS-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
6 Weeks
Contact plating
tinned
表面安装
YES
Number of pins
20
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
SMT
Connector pinout layout
1x20
Gross weight
1.35 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
TO-236, SOT-23, 3 PIN
Drain Current-Max (ID)
6 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-40...200°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
哑光锡
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
Current rating
3A
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-G3
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
JEDEC-95代码
TO-236AB
漏极-源极导通最大电阻
0.028 Ω
DS 击穿电压-最小值
12 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
1.7 W
Rated voltage
125V
反馈上限-最大值 (Crss)
236 pF
个人资料
bronze
饱和电流
1
Plating thickness
4µm
Flammability rating
UL94V-0
SI2333DDS-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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