Vishay Intertechnologies SUD50P04-08-GE3
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SUD50P04-08-GE3
2668-SUD50P04-08-GE3
晶体管 - 特殊用途
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大陆
立即发货

Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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SUD50P04-08-GE3详情
Vishay Intertechnologies SUD50P04-08-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
17 Weeks, 4 Days
表面安装
YES
Housing material
flame retardant plastic
终端数量
2
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Drain Current-Max (ID)
50 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Gross weight
43.00
Transport packaging size/quantity
35*32*26/200
Installation hole size
Ф22 mm
Measurement range
(AC) - 50…500 V, 0-100A
Working temperature range
-25…+65 °C
Completeness
device; ring current sensor Ф14.5/ 32.5 mm; h - 12.5 mm
JESD-609代码
e3
ECCN 代码
EAR99
类型
digital LED volt-ammeter DMS series (AD16-22VAM R)
端子表面处理
Matte Tin (Sn)
颜色
light color - red
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
深度
51 mm
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PSSO-G2
资历状况
不合格
Lead length
device ~ 100; sensor ~ 178 mm
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
≥2 MOhm
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
JEDEC-95代码
TO-252
漏极-源极导通最大电阻
0.0081 Ω
脉冲漏极电流-最大值(IDM)
100 A
DS 击穿电压-最小值
40 V
雪崩能量等级(Eas)
106 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
73.5 W
饱和电流
1
直径
display - 28.5 mm
SUD50P04-08-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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