Vishay Intertechnologies SI7101DN-T1-GE3
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SI7101DN-T1-GE3
2668-SI7101DN-T1-GE3
晶体管 - 特殊用途
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Description: Power Field-Effect Transistor, 35A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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SI7101DN-T1-GE3详情
Vishay Intertechnologies SI7101DN-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Housing material
GF-Polyester (UL-94V-0)
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Gross weight
12.50
Transport packaging size/quantity
47*37*27/100
Compatibility
10P8C plug
Design features
16 LED indicators
Dielectric strength
1000 (50 Hz, 1 min.) V
Switching cycles (electrical)
≥750
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID)
35 A
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
小概要
ECCN 代码
EAR99
Connector type
8-port shielded socket block TJ9-10P8-08 FTP (1 x 8)
端子表面处理
Pure Matte Tin (Sn) - annealed
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
深度
15.75
Reach合规守则
not_compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
S-PDSO-C5
Contact resistance
≤30 mΩ
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
≥500 (at Uisp.dc=500 V) MΩ
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
Operating temperature range
0...+70°C
Rated current
1.5 A
漏极-源极导通最大电阻
0.0072 Ω
脉冲漏极电流-最大值(IDM)
80 A
DS 击穿电压-最小值
30 V
雪崩能量等级(Eas)
20 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
饱和电流
1
特征
indication
触点
phosphor bronze
高度
13.1
宽度
126.75
SI7101DN-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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