Vishay Intertechnologies SI7748DP-T1-GE3
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SI7748DP-T1-GE3
2668-SI7748DP-T1-GE3
晶体管 - 特殊用途
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Power Field-Effect Transistor, 23.5A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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SI7748DP-T1-GE3详情
Vishay Intertechnologies SI7748DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
housing - white PA66; seal - silicone rubber
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Drain Current-Max (ID)
23.5 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Gross Weight
4.83
Transport Packaging Size/Quantity
48*31.5*27/2000
Purpose
for pressure equalization in sealed enclosures and protection against condensation formation
Protection Class
IP67
Application Area
electrotechnical, lighting, photoelectric, security, automotive and other equipment
Air Permeability
not less than 1 l/min at 70 mbar pressure
Mounting Hole Size
D16.2 mm
JESD-609代码
e3
ECCN 代码
EAR99
类型
Pressure Relief Valve M16X1.5, plastic
电阻
hydrostatic pressure - not less than 100 mbar for 30 mins
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
C 弯管
深度
10+8 mm
Reach合规守则
compliant
JESD-30代码
R-XDSO-C5
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
N-CHANNEL
工作温度范围
-40…+125 °C
漏极-源极导通最大电阻
0.0048 Ω
脉冲漏极电流-最大值(IDM)
80 A
DS 击穿电压-最小值
30 V
雪崩能量等级(Eas)
45 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
56 W
饱和电流
1
高度
23.8 (D23.8) mm
宽度
22 mm
直径
through hole - 10 mm
SI7748DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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