Vishay Intertechnologies SIHP065N60E-GE3
- 收藏
- 对比
SIHP065N60E-GE3
2668-SIHP065N60E-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor
1最小包装量--
SIHP065N60E-GE3详情
Vishay Intertechnologies SIHP065N60E-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
18 Weeks
Contact plating
tinned
表面安装
NO
Number of pins
16
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
1.27mm
Electrical mounting
THT
Connector pinout layout
2x8
Row pitch
1.27mm
Gross weight
1.08 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Date Of Intro
2017-01-07
Turn-off Time-Max (toff)
134 ns
Turn-on Time-Max (ton)
148 ns
Package Style
FLANGE MOUNT
Package Shape
RECTANGULAR
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-55 °C
Operating Temperature-Max
150 °C
Drain Current-Max (ID)
40 A
Operating temperature
-40...163°C
ECCN 代码
EAR99
附加功能
雪崩 额定
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
Current rating
1.5A
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PSFM-T3
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-220AB
漏极-源极导通最大电阻
0.065 Ω
脉冲漏极电流-最大值(IDM)
116 A
DS 击穿电压-最小值
600 V
雪崩能量等级(Eas)
226 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
250 W
Rated voltage
125V
反馈上限-最大值 (Crss)
5 pF
个人资料
bronze
Plating thickness
4µm
Flammability rating
UL94V-0
SIHP065N60E-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







哦! 它是空的。