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价格梯度
内地含税价
1
¥19.161321
10
¥18.076721
100
¥17.053507
500
¥16.088211
1000
¥15.177562
Vishay Intertechnologies SIRA00DP-T1-GE3
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- 对比
SIRA00DP-T1-GE3
2668-SIRA00DP-T1-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor, 100A I(D), 30V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
--最小包装量--
¥
总价: ¥
SIRA00DP-T1-GE3详情
Vishay Intertechnologies SIRA00DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
20 Weeks
表面安装
YES
材料
Polyolefin
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
不推荐
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID)
100 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Shrinkage before diameter
4.0 mm
Shrinkage after diameter
2.0 mm
Thickness after shrinkage
0.45 mm
Shrinkage temperature
+80...+120 °C
Gross weight
6.00
Transport packaging size/quantity
105*20*16/1000
JESD-609代码
e3
ECCN 代码
EAR99
类型
Tubular non-supporting combustion heat shrinkable tube
端子表面处理
哑光锡
颜色
blue
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
Reach合规守则
not_compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-C5
Working voltage
600 V
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-55...+125 °C
漏极-源极导通最大电阻
0.001 Ω
脉冲漏极电流-最大值(IDM)
400 A
DS 击穿电压-最小值
30 V
雪崩能量等级(Eas)
125 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Shrinkage ratio
2 : 1
饱和电流
1
长度
1 m
SIRA00DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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