Vishay Intertechnologies SIRA04DP-T1-GE3
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SIRA04DP-T1-GE3
2668-SIRA04DP-T1-GE3
晶体管 - 特殊用途
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大陆
立即发货

Description: Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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SIRA04DP-T1-GE3详情
Vishay Intertechnologies SIRA04DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
10 Weeks
表面安装
YES
Housing material
nickel-plated brass
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALEGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID)
40 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Gross weight
14.92
Transport packaging size/quantity
62*27.5*28/600
Emitter type
point flat
Indicator type
GQ16 series vandal resistant indicator
Teral type
2S (screw)min
Protection class
IP65
Nominal current
15 mA
Nominal voltage
12-24 V
LED service life
≥100,000 hours
Mounting diameter
16 mm
Nominal resistance
2 Ohm
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
颜色
green
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PDSO-C5
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-25°C+55 °C
漏极-源极导通最大电阻
0.00215 Ω
脉冲漏极电流-最大值(IDM)
80 A
DS 击穿电压-最小值
30 V
雪崩能量等级(Eas)
20 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
饱和电流
1
亮度
100 cd/ m2
SIRA04DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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