SIS862DN-T1-GE3
SIS862DN-T1-GE3

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Vishay Intertechnologies SIS862DN-T1-GE3

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型号

SIS862DN-T1-GE3

utmel 编号

2668-SIS862DN-T1-GE3

商品类别

晶体管 - 特殊用途

封装

--

交货地

大陆

交期(工作日)

立即发货

ROHS

ECAD

简介

Power Field-Effect Transistor, 40A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8

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SIS862DN-T1-GE3
SIS862DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 40A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8

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SIS862DN-T1-GE3详情

Vishay Intertechnologies SIS862DN-T1-GE3重要参数规格及、参数值,及相似型号如下:

  • 参数名
    参数值
    全选
  • 参数名
    参数值
    全选
  • 工厂交货时间

    28 Weeks

  • 表面安装

    YES

  • Housing material

    nickel-plated brass

  • 终端数量

    5

  • 晶体管元件材料

    SILICON

  • 外壳材料

    1

  • Rohs Code

  • Part Life Cycle Code

    活跃

  • Ihs Manufacturer

    VISHAY INTERTECHNOLOGY INC

  • Package Description

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8

  • Drain Current-Max (ID)

    40 A

  • Package Body Material

    PLASTIC/EPOXY

  • Package Shape

    SQUARE

  • Package Style

    小概要

  • Gross weight

    79.00

  • Transport packaging size/quantity

    42*28*18.5/50

  • Indicator type

    dot

  • Switching scheme

    ON-(OFF) + OFF-(ON) without fixation

  • Protection class

    IP65

  • Number of switching cycles (electrical)

    ≥50000

  • Illumination voltage

    12 V

  • Illuation color

    greemin

  • Relative humidity

    45...85 %

  • Dielectric strength

    2000 (50 Hz / 5 s) V

  • LED working life

    ≥40000 hours

  • Head and button shape

    flat ring and button

  • Mounting diameter

    30 mm

  • JESD-609代码

    e3

  • ECCN 代码

    EAR99

  • 端子表面处理

    Matte Tin (Sn) - annealed

  • 端子位置

    DUAL

  • 终端形式

    FLAT

  • 峰值回流焊温度(摄氏度)

    260

  • Reach合规守则

    not_compliant

  • 时间@峰值回流温度-最大值(s)

    30

  • JESD-30代码

    S-PDSO-F5

  • Contact resistance

    ≤50 mΩ

  • 配置

    SINGLE WITH BUILT-IN DIODE

  • Insulation resistance

    ≥1000 MΩ

  • 操作模式

    增强型MOSFET

  • 箱体转运

    DRAIN

  • Switch type

    GQ30 series vandal-resistant button with illumination

  • 晶体管应用

    SWITCHING

  • 极性/通道类型

    N-CHANNEL

  • Operating temperature range

    -25…+55 °C

  • Rated current

    5 A

  • 漏极-源极导通最大电阻

    0.0085 Ω

  • 脉冲漏极电流-最大值(IDM)

    100 A

  • DS 击穿电压-最小值

    60 V

  • 雪崩能量等级(Eas)

    11.25 mJ

  • 场效应管技术

    METAL-OXIDE SEMICONDUCTOR

  • Rated voltage

    250 V

  • 饱和电流

    1

  • 触点

    4Pin+2Pin

  • 直径

    35 mm

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