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价格梯度
内地含税价
1
¥9.663868
10
¥9.116855
100
¥8.600811
500
¥8.113969
1000
¥7.654691
Vishay Intertechnologies SQJ476EP-T1_GE3
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- 对比
SQJ476EP-T1_GE3
2668-SQJ476EP-T1_GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor,
--最小包装量--
¥
总价: ¥
SQJ476EP-T1_GE3详情
Vishay Intertechnologies SQJ476EP-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
25 Weeks
表面安装
YES
终端数量
4
晶体管元件材料
SILICON
外壳材料
1
Completeness
3p plug + 3p socket
Maximum current
30 A
Dielectric strength
600 V
Insulator material
PBT
Fire resistance class
UL94 V0
Transport packaging size/quantity
42*28*23.5/200
Type of capacitor
ceramic
Kind of capacitor
MLCC
Mounting
SMD
Case - inch
1206
Case - mm
3216
Capacitors series
KAF
Gross weight
0.032 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SO-8L, 4 PIN
Date Of Intro
2016-07-18
Drain Current-Max (ID)
23 A
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-55...125°C
容差
±10%
ECCN 代码
EAR99
Connector type
High power connector set TX30 for radio controlled models, three-pin
电容量
1µF
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
深度
plug - 26; socket - 23.2 mm
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PSSO-G4
电介质
X7R
Contact resistance
≤0.6 mОm
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
N-CHANNEL
Operating temperature range
-40...+120 °C
Rated current
15 A
漏极-源极导通最大电阻
0.038 Ω
脉冲漏极电流-最大值(IDM)
45 A
DS 击穿电压-最小值
100 V
雪崩能量等级(Eas)
16 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Operating voltage
50V
高度
plug - 12.20; socket - 12.30 mm
宽度
24.7 mm
SQJ476EP-T1_GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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