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CYDM128B16-55BVXIT备选型号: IS43DR16320C-3DBL

CYDM128B16-55BVXIT

Cypress Semiconductor Corp

IC SRAM 128K PARALLEL 100VFBGA

表面贴装
100-VFBGA
YES
100
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2005
e1
yes
Obsolete
3 (168 Hours)
100
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
1.7V~1.9V 2.4V~2.6V 3V~3.6V
BOTTOM
260
1
1.8V
0.5mm
20
CYDM
1.8V
1.9V
1.8/3V
1.7V
128Kb 8K x 16
2
0.06mA
SRAM
Parallel
8KX16
3-STATE
16
55ns
26b
128 kb
0.000006A
55 ns
COMMON
1.7V
6mm
1mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
IS43DR16320C-3DBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin TW-BGA

表面贴装
84-TFBGA
-
84
Volatile
0°C~70°C TA
Tray
-
-
-
活跃
3 (168 Hours)
84
-
-
1.7V~1.9V
BOTTOM
-
1
1.8V
0.8mm
-
-
1.8V
1.9V
-
1.7V
512Mb 32M x 16
1
-
DRAM
Parallel
32MX16
3-STATE
16
15ns
15b
512 Mb
0.011A
-
COMMON
-
12.5mm
1.2mm
无
ROHS3 Compliant
无铅
8 Weeks
Copper, Silver, Tin
表面贴装
AUTO/SELF REFRESH
250mA
120mA
333MHz
450ps
16b
8192
48
48
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16320C-3DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin TW-BGA	对比
	CYDM256B16-55BVXI	Cypress Semiconductor Corp	存储器	100-VFBGA	SRAM 256K 16Kx16 MoBL Dual Port IND	对比
	CYDM064B16-55BVXI	Cypress Semiconductor Corp	存储器	100-VFBGA	IC SRAM 64K PARALLEL 100VFBGA	对比