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FGA40N65SMD备选型号: STGW39NC60VD

FGA40N65SMD

ON Semiconductor

IGBT Transistors 650V, 40A Field Stop IGBT

ACTIVE (Last Updated: 3 days ago)
6 Weeks
Tin
通孔
通孔
TO-3P-3, SC-65-3
3
6.401g
SILICON
650V
2.5V
-55°C~175°C TJ
Tube
2008
e3
yes
活跃
1 (Unlimited)
3
EAR99
低导通损耗
8541.29.00.95
349W
28ns
Single
349W
Standard
12 ns
电源控制
N-CHANNEL
650V
80A
42 ns
2.5V @ 15V, 40A
场站
119nC
120A
12ns/92ns
820μJ (on), 260μJ (off)
20V
6V
17ns
20.1mm
16.2mm
5mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
STGW39NC60VD

STMicroelectronics

STMICROELECTRONICS STGW39NC60VD IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins

ACTIVE (Last Updated: 7 months ago)
8 Weeks
Tin
通孔
通孔
TO-247-3
3
-
SILICON
600V
1.8V
-55°C~150°C TJ
Tube
-
e3
-
活跃
1 (Unlimited)
3
EAR99
-
-
250W
-
Single
250W
Standard
33 ns
电源控制
N-CHANNEL
600V
80A
45ns
2.4V @ 15V, 30A
-
126nC
220A
33ns/178ns
333μJ (on), 537μJ (off)
20V
5.75V
-
20.15mm
15.75mm
5.15mm
无
ROHS3 Compliant
无铅
PowerMESH™
600V
40A
STGW39
3
ISOLATED
13ns
600V
40A
TO-247AC
46 ns
366 ns
无SVHC
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	STGW30NC60VD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	Trans IGBT Chip N-CH 600V 80A 3-Pin(3 Tab) TO-247 Tube	对比
	FGA30N65SMD	ON Semiconductor	晶体管 - IGBT - 单个	TO-3P-3, SC-65-3	IGBT Transistors 650V 30A FS Planar Gen2 IGBT	对比
	STGW39NC60VD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	STMICROELECTRONICS STGW39NC60VD IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins	对比