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IRF6674TRPBF备选型号: FDD13AN06A0

IRF6674TRPBF

Infineon Technologies

MOSFET N-CH 60V 13.4A DIRECTFET

12 Weeks
DirectFET™ Isometric MZ
表面贴装
表面贴装
5
SILICON
3.6W Ta 89W Tc
4.9V @ 100μA
HEXFET®
Tape & Reel (TR)
-40°C~150°C TJ
2008
e1
活跃
1 (Unlimited)
3
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
BOTTOM
R-XBCC-N3
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
89W
DRAIN
7 ns
N-Channel
SWITCHING
11m Ω @ 13.4A, 10V
1350pF @ 25V
36nC @ 10V
12ns
±20V
8.7 ns
67A
4V
20V
60V
98 mJ
4 V
6.35mm
530μm
5.05mm
ROHS3 Compliant
无
无SVHC
-
-
-
-
-
-
-
-
-
-
-
-
FDD13AN06A0

ON Semiconductor

Trans MOSFET N-CH 60V 9.9A 3-Pin(2 Tab) TO-252AA T/R

8 Weeks
TO-252-3, DPak (2 Leads + Tab), SC-63
表面贴装
表面贴装
3
SILICON
26 ns
4V @ 250μA
PowerTrench®
Tape & Reel (TR)
-55°C~175°C TJ
2003
e3
ACTIVE (Last Updated: 6 days ago)
1 (Unlimited)
2
EAR99
-
-
R-PSSO-G2
-
增强型MOSFET
115W
DRAIN
9 ns
N-Channel
SWITCHING
13.5m Ω @ 50A, 10V
1350pF @ 25V
29nC @ 10V
77ns
±20V
25 ns
50A
4V
20V
60V
56 mJ
4 V
6.73mm
2.39mm
6.22mm
ROHS3 Compliant
无
无SVHC
Tin
260.37mg
yes
SMD/SMT
60V
鸥翼
9.9A
FDD13AN06
Single
TO-252AA
60V
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	FDB13AN06A0	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans MOSFET N-CH 60V 10.9A 3-Pin(2 Tab) D2PAK T/R	对比
	FDD13AN06A0	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	Trans MOSFET N-CH 60V 9.9A 3-Pin(2 Tab) TO-252AA T/R	对比
	IRF1018ESPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 60V 79A D2PAK	对比