登录 / 注册

产品

输入型号/关键词

IXGA20N120B备选型号: HGT1S10N120BNS

IXGA20N120B

IXYS

IGBT 1200V 40A 150W TO263

8 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
1.59999g
SILICON
1.2kV
-55°C~150°C TJ
Tube
2002
e3
yes
活跃
1 (Unlimited)
2
PURE TIN
低导通损耗
150W
SINGLE
鸥翼
未说明
unknown
未说明
IXG*20N120
4
R-PSSO-G2
不合格
SINGLE
COLLECTOR
Standard
150W
电源控制
N-CHANNEL
2.5V
40A
TO-263AA
1200V
61 ns
2.5V @ 15V, 20A
720 ns
63nC
28ns/400ns
6.5mJ (off)
20V
5V
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGT1S10N120BNS

ON Semiconductor

Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2 Tab) TO-263AB Rail

44 Weeks
Surface Mount, Through Hole
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
1.31247g
SILICON
1.2kV
-55°C~150°C TJ
Tube
-
e3
yes
不用于新设计
1 (Unlimited)
2
Tin (Sn)
低导通损耗
312W
-
鸥翼
260
-
30
HGT1S10N120
-
R-PSSO-G2
-
-
COLLECTOR
Standard
-
MOTOR CONTROL
N-CHANNEL
1.2kV
35A
-
1200V
32 ns
2.7V @ 15V, 10A
330 ns
100nC
23ns/165ns
320μJ (on), 800μJ (off)
-
-
ROHS3 Compliant
ACTIVE, NOT REC (Last Updated: 1 day ago)
3
2.7V
EAR99
8541.29.00.95
1.2kV
35A
1.2kV
Single
35A
298W
1.2kV
55A
NPT
80A
4.83mm
10.67mm
9.65mm
无
无铅
添加型号

分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	SKB02N120ATMA1	Infineon Technologies	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2 Tab) TO-263	对比
	HGT1S10N120BNS	ON Semiconductor	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2 Tab) TO-263AB Rail	对比
	IRG4BH20K-STRLP	Infineon Technologies	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IGBT 1200V 11A 60W D2PAK	对比