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TK10E60W,S1VX备选型号: FCP380N60E

TK10E60W,S1VX

Toshiba Semiconductor and Storage

MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC

16 Weeks
通孔
通孔
TO-220-3
9.7A Ta
150°C TJ
Tube
DTMOSIV
2012
活跃
不适用
Single
100W
N-Channel
380m Ω @ 4.9A, 10V
3.7V @ 500μA
700pF @ 300V
20nC @ 10V
22ns
±30V
5.5 ns
9.7A
30V
600V
超级交界处
符合RoHS标准
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FCP380N60E

ON Semiconductor

FAIRCHILD SEMICONDUCTOR FCP380N60E Power MOSFET, N Channel, 10.2 A, 600 V, 0.32 ohm, 10 V, 2.5 V

12 Weeks
通孔
通孔
TO-220-3
10.2A Tc
-55°C~150°C TJ
Tube
SuperFET® II
2012
活跃
1 (Unlimited)
Single
106W
N-Channel
380m Ω @ 5A, 10V
3.5V @ 250μA
1770pF @ 25V
45nC @ 10V
9ns
±20V
10 ns
10.2A
20V
600V
-
ROHS3 Compliant
ACTIVE (Last Updated: 1 week ago)
3
1.8g
e3
yes
EAR99
Tin (Sn)
17 ns
2.5V
9.4mm
10.67mm
4.83mm
无SVHC
无
无铅
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	FCP380N60	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-220-3	MOSFET SuperFET2, 380mohm	对比
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	FCP380N60E	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-220-3	FAIRCHILD SEMICONDUCTOR FCP380N60E Power MOSFET, N Channel, 10.2 A, 600 V, 0.32 ohm, 10 V, 2.5 V	对比