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TK12E60W,S1VX备选型号: STP18N60DM2

TK12E60W,S1VX

Toshiba Semiconductor and Storage

MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC

16 Weeks
通孔
通孔
TO-220-3
11.5A Ta
150°C TJ
Tube
DTMOSIV
2013
活跃
1 (Unlimited)
Single
110W
N-Channel
300m Ω @ 5.8A, 10V
3.7V @ 600μA
890pF @ 300V
25nC @ 10V
23ns
±30V
5.5 ns
11.5A
30V
600V
超级交界处
无
符合RoHS标准
-
-
-
-
-
-
-
-
-
-
-
STP18N60DM2

STMicroelectronics

STMICROELECTRONICS STP18N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V

17 Weeks
通孔
通孔
TO-220-3
12A Tc
150°C TJ
Tube
MDmesh™ DM2
-
活跃
1 (Unlimited)
-
-
N-Channel
295mOhm @ 6A, 10V
5V @ 250μA
800pF @ 100V
20nC @ 10V
-
±25V
-
12A
-
-
-
-
ROHS3 Compliant
ACTIVE (Last Updated: 7 months ago)
3
TO-220
150°C
STP18N
600V
3V
800pF
260mOhm
295 mΩ
无SVHC
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