GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	引脚数量	JESD-30代码	资历状况	电源电压-最大值(Vsup)	电源	温度等级	电源电压-最小值(Vsup)	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	产品类别	长度
GS8644Z36E-166I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	2.7, 3.6 V	有	166 MHz	+ 85 C	3.6 V	- 40 C	15	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	BGA, BGA165,11X15,40	网格排列	3	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	7 ns	85 °C	无	GS8644Z36E-166I	166 MHz	2097152 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.14	BGA	142.8@Flow-Through/166@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	36 Bit	-40 to 85 °C	Tray	GS8644Z36E		无	3A991.B.2.B	NBT		ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	165	R-PBGA-B165	不合格	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	72 Mbit		SYNCHRONOUS	285 mA, 345 mA	7@Flow-Through/3.5@P		2 M x 36	3-STATE	1.5 mm	36		SRAM		0.16 A	72		PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	17 mm	15 mm
GS842Z36CB-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119				有	250 MHz	+ 70 C	3.6 V	0 C	84	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR		Tray	GS842Z36CB				NBT Pipeline/Flow Through				Memory & Data Storage															4 Mbit			155 mA, 195 mA	5.5 ns		128 k x 36					SRAM									SRAM
GS8182S18BD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	1000000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	无	GS8182S18BD-200	1048576 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.15	BGA	有	200 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR	LBGA,	GRID ARRAY, LOW PROFILE		Tray	GS8182S18BD	e0	无	3A991.B.2.B	SigmaSIO DDR-II	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	165	R-PBGA-B165	不合格	1.9 V		COMMERCIAL	1.7 V	18 Mbit		SYNCHRONOUS	355 mA			1 M x 18		1.4 mm	18		SRAM			18874368 bit		PARALLEL		DDR SRAM		SRAM	15 mm	13 mm
GS8180QV18BGD-167	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-I	Details	DDR	Commercial grade				167 MHz	FBGA	DDR	2.5000 V	2.4 V	Synchronous	1 MWords	18 Bit	2.6 V	表面贴装	有	167 MHz	+ 70 C	2.6 V	0 C	18	2.4 V	0 to 70 °C	Tray	GS8180QV18BGD				SigmaQuad				Memory & Data Storage								165							18 Mbit	2				Pipelined	1 M x 18				19 Bit	SRAM	18 Mbit			Commercial					SRAM
GS816036DGT-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	LQFP,	FLATPACK, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS816036DGT-250	524288 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.32	QFP	有	250 MHz	+ 85 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS816036DGT			3A991.B.2.B	Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	100	R-PQFP-G100		2.7 V		COMMERCIAL	2.3 V	18 Mbit		SYNCHRONOUS	230 mA, 250 mA	5.5 ns		512 k x 36		1.6 mm	36		SRAM			18874368 bit		PARALLEL		缓存SRAM		SRAM	20 mm	14 mm
GS882Z18CGB-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	NBT SRAM	Details	SDR				有	150 MHz	+ 70 C	3.6 V	0 C	42	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS882Z18CGB				NBT Pipeline/Flow Through				Memory & Data Storage															9 Mbit			120 mA, 130 mA	7.5 ns		512 k x 18					SRAM									SRAM
GS88018CGT-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	GSI技术	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	7.5 ns	85 °C	有	GS88018CGT-150I	150 MHz	524288 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	QFP	有	150 MHz	+ 85 C	3.6 V	- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术		Tray	GS88018CGT	e3	有	3A991.B.2.B	Pipeline/Flow Through	纯哑光锡	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	100	R-PQFP-G100	不合格	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit		SYNCHRONOUS	140 mA, 150 mA	7.5 ns		512 k x 18	3-STATE	1.6 mm	18		SRAM		0.045 A	9437184 bit		PARALLEL	COMMON	缓存SRAM	2.3 V	SRAM	20 mm	14 mm
GS8162Z18DB-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119				有	150 MHz	+ 85 C	3.6 V	- 40 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR		Tray	GS8162Z18DB				NBT Pipeline/Flow Through				Memory & Data Storage															18 Mbit			190 mA, 200 mA	7.5 ns		1 M x 18					SRAM									SRAM
GS816136DD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SyncBurst	N	SDR				有	150 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS816136DD				Pipeline/Flow Through				Memory & Data Storage															18 Mbit			180 mA, 190 mA	7.5 ns		512 k x 36					SRAM									SRAM
GS842Z36CGB-100I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	7 Weeks	BGA-119	YES	119	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	128 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	100 MHz	+ 85 C	3.6 V	- 40 C	84	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA, BGA119,7X17,50	网格排列	128000	BGA	5.35	GSI TECHNOLOGY	活跃	RECTANGULAR	BGA	2.5 V	100 MHz	GS842Z36CGB-100I	有	85 °C	12 ns	未说明	-40 °C	BGA119,7X17,50	PLASTIC/EPOXY	Industrial grade	83.3@Flow-Through/100@Pipelined MHz	-40 to 100 °C	Tray	GS842Z36CGB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	119	R-PBGA-B119	不合格	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	4 Mbit	4	SYNCHRONOUS	130 mA, 140 mA	12 ns	Flow-Through/Pipelined	128 k x 36	3-STATE	1.99 mm	36	17 Bit	SRAM	4 Mbit	0.045 A	4718592 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
GS842Z18CB-100I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	7 Weeks	BGA-119	YES	119	网格排列	256000	PLASTIC/EPOXY	BGA119,7X17,50	12 ns	70 °C	无	GS842Z18CB-100I	100 MHz	262144 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	有	100 MHz	+ 85 C	3.6 V	- 40 C	84	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	BGA, BGA119,7X17,50		Tray	GS842Z18CB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1.27 mm	compliant	119	R-PBGA-B119	不合格	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	4 Mbit		SYNCHRONOUS	130 mA	12 ns		256 k x 18	3-STATE	1.99 mm	18		SRAM		0.045 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM	2.3 V	SRAM	22 mm	14 mm
GS880E32CGT-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	SyncBurst	Details	SDR				有	250 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS880E32CGT				DCD				Memory & Data Storage															9 Mbit			155 mA, 195 mA	5.5 ns		256 k x 32					SRAM									SRAM
GS8672D18BE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	0.45 ns	85 °C	无	GS8672D18BE-333I	333 MHz	4194304 words	1.8 V	LBGA	RECTANGULAR	Obsolete	GSI TECHNOLOGY	5.43	BGA	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	QDR-II		Tray	GS8672D18BE			3A991.B.2.B	SigmaQuad-II		管道结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	165	R-PBGA-B165	不合格	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	72 Mbit		SYNCHRONOUS	1.21 A			4 M x 18	3-STATE	1.5 mm	18		SRAM			72		PARALLEL	SEPARATE	标准SRAM	1.7 V	SRAM	17 mm	15 mm
GS882Z18CB-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1
GS8672D18BE-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165				有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	QDR-II		Tray	GS8672D18BE				SigmaQuad-II				Memory & Data Storage															72 Mbit			1.38 A			4 M x 18					SRAM			72						SRAM
GS8672D38BE-633I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165				有	633 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II		Tray	GS8672D38BE				SigmaQuad-II+ B4				Memory & Data Storage															72 Mbit			2.76 A			2 M x 36					SRAM			72						SRAM
GS8161Z36DGD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	2.7, 3.6 V	有	200 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS8161Z36DGD-200	524288 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	4.78	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	Synchronous	36 Bit	0 to 70 °C	Tray	GS8161Z36DGD			3A991.B.2.B	NBT		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	165	R-PBGA-B165		2.7 V		COMMERCIAL	2.3 V	18 Mbit		SYNCHRONOUS	210 mA	6.5@Flow-Through/3@P		512 k x 36		1.4 mm	36	19 Bit	SRAM			18	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm
GS8182D18BGD-167	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SigmaQuad-II	Details	DDR				有	167 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS8182D18BGD				SigmaQuad-II				Memory & Data Storage															18 Mbit			315 mA			1 M x 18					SRAM									SRAM
GS8672Q36BGE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SigmaQuad-II	Details	QDR-II				有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS8672Q36BGE				SigmaQuad-II				Memory & Data Storage															72 Mbit			1.62 A			2 M x 36					SRAM			72						SRAM
GS8161Z36DGD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	6 Weeks, 6 Days	BGA-165	YES	165	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS8161Z36DGD-150	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA	Commercial grade	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	0 to 70 °C	Tray	GS8161Z36DGD			3A991.B.2.B	NBT		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	165	R-PBGA-B165		2.7 V		COMMERCIAL	2.3 V	18 Mbit	4	SYNCHRONOUS	180 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36		1.4 mm	36		SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		SRAM	15 mm	13 mm
GS81302TT07E-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS81302TT07E				SigmaDDR-II+ B2				Memory & Data Storage								165							144 Mbit	1		905 mA		Pipelined	16 M x 8				23 Bit	SRAM	144 Mbit			Industrial					SRAM
GS88132CGT-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	LQFP,	FLATPACK, LOW PROFILE	256000	UNSPECIFIED	-40 °C	未说明	85 °C	有	GS88132CGT-150I	262144 words	3.3 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	QFP	有	150 MHz	+ 85 C	3.6 V	- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS88132CGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	100	R-XQFP-G100	不合格	3.6 V		INDUSTRIAL	3 V	9 Mbit		SYNCHRONOUS	150 mA, 160 mA	7.5 ns		256 k x 36		1.6 mm	32		SRAM			8388608 bit		SERIAL		缓存SRAM		SRAM	20 mm	14 mm
GS816132DD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	SyncBurst	N	SDR				有	250 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS816132DD				Pipeline/Flow Through				Memory & Data Storage															18 Mbit			230 mA, 250 mA	5.5 ns		512 k x 32					SRAM									SRAM
GS880F18CGT-6.5I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	+ 85 C	3.6 V	- 40 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	6.5 ns	85 °C	有	GS880F18CGT-6.5I	153 MHz	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	QFP	Industrial grade	153.8 MHz	-40 to 85 °C	Tray	GS880F18CGT	e3	有	3A991.B.2.B	流过	纯哑光锡	FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	100	R-PQFP-G100	不合格	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	150 mA	6.5 ns	Flow-Through	512 k x 18	3-STATE	1.6 mm	18	18 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	缓存SRAM	2.3 V	SRAM	20 mm	14 mm
GS832218AGB-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	-40 to 100 °C	Tray	GS832218AGB				Pipeline/Flow Through				Memory & Data Storage								119							36 Mbit	2		235 mA, 275 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial					SRAM