N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

150 MHz

+ 100 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 100 °C

18 Mbit

2

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

N/A

-

BGA-165

165

400 MHz

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

0 to 85 °C

Tray

GS8342T18BGD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

600 mA

0.45

2 M x 18

SRAM

36

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

300 MHz

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342R08BGD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

450 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

+ 85 C

300 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342Q36BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

BGA

Industrial grade

300 MHz

-40 to 100 °C

Tray

GS8342Q36BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

980 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

0.235 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

36 Bit

1 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

有

200 MHz

+ 70 C

3.6 V

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

14

0 C

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

6.5 ns

70 °C

有

GS832236AGB-200

200 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

表面贴装

2.7, 3.6 V

0 to 85 °C

Tray

GS832236AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-119

YES

119

119

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

153.8@Flow-Through/200@Pipelined MHz

有

200 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA,

网格排列

1000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8162Z18DGB-200V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

表面贴装

2, 2.7 V

18 Bit

1 MWords

0 to 85 °C

Tray

GS8162Z18DGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8182D37BGD-333

333 MHz

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

有

333 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8182D37BGD

e1

有

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

18 Mbit

SYNCHRONOUS

575 mA

512 k x 36

3-STATE

1.4 mm

36

SRAM

0.16 A

18874368 bit

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

10 mm

N/A

-

6 Weeks

BGA-48

YES

48

48

64000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

12 ns

85 °C

有

GS71116AGU-12I

65536 words

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

+ 85 C

3.6 V

- 40 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

GS71116AGU

e1

有

3A991.B.2.B

Asynchronous

锡银铜

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

1 Mbit

ASYNCHRONOUS

90 mA

12 ns

64 k x 16

3-STATE

1.2 mm

16

SRAM

0.005 A

1048576 bit

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 85 °C

Tray

GS8322Z36AB

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 100 °C

Tray

GS8162Z36DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT37BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

640 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

未说明

5 ns

70 °C

有

GS881Z18CGT-300

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.51

QFP

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

300 MHz

0 to 70 °C

GS881Z18CGT

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

1

SYNCHRONOUS

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

9 Mbit

9437184 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

18 Bit

0 to 85 °C

GS8342T18BD

36 Mbit

1

600 mA

Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342DT10BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

665 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS8161Z36DGT

NBT

Memory & Data Storage

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 85 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T37BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

580 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

2.7, 3.6 V

表面贴装

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

5.5 ns

70 °C

无

GS832218AB-250

250 MHz

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.11

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

0 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-119

119

250@Flow-Through/400@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

400 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 85 °C

Tray

GS816236DGB

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

280 mA, 365 mA

4@Flow-Through/2.5@P

512 k x 36

19 Bit

SRAM

18

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8161Z36DGD-150V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Tray

GS8161Z36DGD

3A991.B.2.B

NBT

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q18BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

885 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mb

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

SDR

BGA

5.26

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

2.5 V

524288 words

GS8161Z36DGD-250I

有

85 °C

5.5 ns

未说明

-40 °C

PLASTIC/EPOXY

512000

GRID ARRAY, LOW PROFILE

LBGA,

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

Tray

GS8161Z36DGD

3A991.B.2.B

NBT

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

SYNCHRONOUS

250 mA, 270 mA

5.5 ns

512 k x 36

1.4 mm

36

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

GS8342TT07BGD-333

有

70 °C

0.45 ns

未说明

BGA165,11X15,40

PLASTIC/EPOXY

4000000

GRID ARRAY, LOW PROFILE

LBGA, BGA165,11X15,40

Commercial grade

333 MHz

FBGA

0 to 85 °C

Tray

GS8342TT07BGD

3A991.B.2.B

SigmaDDR-II+ B2

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

515 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS816136DD

同步突发

Memory & Data Storage

18 Mbit

4

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS8160Z36DGT-250V

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.49

QFP

有

250 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS8160Z36DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

512 k x 36

1.6 mm

36

SRAM

18

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm