N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662TT37BGD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

400 MHz

FBGA

0 to 85 °C

Tray

GS8662TT37BGD

e1

有

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

800 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

0.245 A

75497472 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662D18BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

250 MHz

-40 to 100 °C

Tray

GS8662D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

510 mA

Pipelined

4 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

GS81302D10GE

144 Mbit

2

1.065 A

Pipelined

16 M x 9

22 Bit

144 Mbit

Industrial

N/A

-

10 Weeks

YES

165

165

4.2 ns

85 °C

无

GS8161Z32DD-375I

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

表面贴装

2.7, 3.6 V

32 Bit

512 kWords

Synchronous

2.3, 3 V

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

-40 to 85 °C

3A991.B.2.B

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through/Pipelined

512KX32

1.4 mm

32

19 Bit

18 Mbit

16777216 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8161Z36DGT-150I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.66

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS8161Z36DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

YES

100

100

3

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8160Z36BGT-200I

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.68

QFP

LQFP,

FLATPACK, LOW PROFILE

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

SYNCHRONOUS

512KX36

1.6 mm

36

18874368 bit

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

N/A

-

YES

100

100

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS8320Z36GT-166

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.66

QFP

LQFP,

FLATPACK, LOW PROFILE

3

1000000

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

1MX36

1.6 mm

36

37748736 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

6 Weeks

YES

44

44

PLASTIC/EPOXY

TSOP44,.46,32

未说明

8 ns

70 °C

有

GS72108AGP-8

262144 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.73

TSOP2

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

256000

有

3A991.B.2.B

Pure Matte Tin (Sn)

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

COMMERCIAL

ASYNCHRONOUS

0.115 mA

256KX8

3-STATE

1.2 mm

8

0.02 A

2097152 bit

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

YES

18.41 mm

10.16 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

18 Bit

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302Q18GE-250

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

7.61

BGA

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

0 to 85 °C

Tray

GS81302Q18GE

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

1.06 A

450 ps

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-119

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 125 C

SMD/SMT

SDR

有

21

SyncBurst

3.6 V

Tray

GS816236DGB

Pipeline/Flow Through

18 Mbit

6.5 ns

512 k x 36

N/A

-

uBGA-144

YES

144

144

GS4576C36GL-24I

16777216 words

1.8 V

TFBGA

RECTANGULAR

生命周期结束

GSI TECHNOLOGY

5.09

BGA

Details

SMD/SMT

400 MHz

1.7 V

- 40 C

+ 95 C

有

18

0.423288 oz

1.9 V

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

16000000

PLASTIC/EPOXY

-40 °C

未说明

85 °C

有

Tray

3A991.B.2.B

SDRAM - DDR

AUTO/SELF REFRESH

8542.32.00.32

CMOS

BOTTOM

BALL

未说明

1

0.8 mm

compliant

R-PBGA-B144

不合格

INDUSTRIAL

576 Mbit

1

SYNCHRONOUS

640 mA

36 bit

16 M x 36

1.2 mm

36

603979776 bit

DDR DRAM

1.9 V

1.7 V

多库页面突发

YES

18.5 mm

11 mm

N/A

-

BGA-119

YES

119

70 °C

有

GS84032CGB-150

131072 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

SyncBurst

84

有

SDR

SMD/SMT

+ 70 C

0 C

2.3 V

Parallel

150 MHz

Details

3.6 V

BGA,

网格排列

128000

PLASTIC/EPOXY

未说明

Tray

GS84032CGB

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

COMMERCIAL

4 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

128 k x 32

1.99 mm

32

4194304 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

QDR-II

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS8672Q20BE

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

1.51 A

4 M x 18

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

NBT SRAM

Details

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

15

0 C

1.9 V

+ 70 C

有

333 MHz

DDR-II

Details

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

Tray

GS8672T19BGE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

950 mA

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

QDR-II

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8672D36BE

SigmaQuad-II

Memory & Data Storage

72 Mbit

1.88 A

2 M x 36

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS816136DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

512 k x 36

SRAM

SRAM

N/A

-

BGA-165

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS816218DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

170 mA, 180 mA

7.5 ns

1 M x 18

SRAM

SRAM

N/A

-

BGA-119

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

250 MHz

+ 70 C

GS882Z18CGB

9 Mbit

145 mA, 180 mA

5.5 ns

512 k x 18

N/A

-

BGA-165

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

15

SigmaQuad-II

1.9 V

400 MHz

Tray

GS8672Q18BE

SigmaQuad-II

72 Mbit

1.38 A

4 M x 18

72

N/A

-

TQFP-100

GSI技术

NBT SRAM

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS881Z36CGT

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

130 mA, 140 mA

7.5 ns

256 k x 36

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

NBT SRAM

Details

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

250 mA, 270 mA

5.5 ns

512 k x 32

SRAM

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.52

QFP

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS881Z36CGT-250

262144 words

2.5 V

LQFP

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

155 mA, 195 mA

5.5 ns

256 k x 36

1.6 mm

36

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

GS8321E36AD

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

85 °C

有

GS8321E36AGD-150

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

133@Flow-Through/150@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8321E36AGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

锡银铜

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm