N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS8128436GB

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

350 mA, 440 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS81284Z18B-250I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.82

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 85 °C

Tray

GS81284Z18B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

390 mA, 490 mA

6.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302DT07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Military grade

153@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 125 C

3.6 V

- 55 C

21

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

255 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

Commercial grade

表面贴装

1.9 V

9 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

375 MHz

有

375 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8182S09BGD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

2

680 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

TQFP-100

YES

100

有

GS81280E36GT-200

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

85 °C

Tray

GS81280E36GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

330 mA, 400 mA

6.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

YES

165

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS82582Q20GE-400I

400 MHz

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

400 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

1.9 V

LBGA, BGA165,11X15,40

Tray

GS82582Q20GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8 V

INDUSTRIAL

288 Mbit

SYNCHRONOUS

1.18 A

16 M x 18

3-STATE

1.5 mm

18

301989888 bit

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

TQFP-100

YES

100

8388608 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

85 °C

GS8128018GT-200V

Tray

GS8128018GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

295 mA, 360 mA

6.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

TQFP-100

YES

100

4194304 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

85 °C

GS81280E36GT-200V

Tray

GS81280E36GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

330 mA, 400 mA

6.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS81314LD18GK-106

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

1.066 GHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

QDR_IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

Tray

GS81314LD18GK

3A991.B.2.B

SigmaQuad-IVe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.3 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

833 MHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

GS81313HD36GK-833I

4194304 words

1.25 V

Tray

GS81313HD36GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

2.55 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

625 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

85 °C

GS81313HD36GK-625

Tray

GS81313HD36GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.1 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

600 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

85 °C

GS81313HQ36GK-600

Tray

GS81313HQ36GK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.1 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

714 MHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

GS81313HD36GK-714I

4194304 words

1.25 V

Tray

GS81313HD36GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

2.35 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

4194304 words

1.25 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

833 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

85 °C

GS81313HD36GK-833

Tray

GS81313HD36GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.55 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

BGA260,13X20,40

85 °C

有

GS81313HT36GK-625

625 MHz

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

625 MHz

Parallel

1.2 V

0 C

+ 70 C

SMD/SMT

DDR-III

有

10

SigmaDDR-IIIe

1.35 V

HBGA, BGA260,13X20,40

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

Tray

GS81313HT36GK

3A991.B.2.B

SigmaDDR-III

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

不合格

1.2 V

OTHER

144 Mbit

SYNCHRONOUS

1.2 A

4 M x 36

3-STATE

2.3 mm

36

150994944 bit

PARALLEL

COMMON

DDR SRAM

1.15 V

1.35 V

1.15 V

22 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

85 °C

有

GS81314LD19GK-933

8388608 words

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

QDR-IVe

有

Details

933 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

Tray

GS81314LD19GK

3A991.B.2.B

SigmaQuad-IVe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.25 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

YES

144

PLASTIC/EPOXY

未说明

95 °C

有

GS4576C09GM-33

67108864 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.09

LBGA,

GRID ARRAY, LOW PROFILE

64000000

Beige

自动刷新

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

OTHER

1

SYNCHRONOUS

64MX9

1.25 mm

9

603979776 bit

DDR DRAM

1.9 V

1.7 V

多库页面突发

18.5 mm

11 mm

N/A

-

YES

144

PLASTIC/EPOXY

未说明

95 °C

有

GS4576C18GM-18

33554432 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.09

LBGA,

GRID ARRAY, LOW PROFILE

32000000

自动刷新

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

OTHER

1

SYNCHRONOUS

32MX18

1.25 mm

18

603979776 bit

DDR DRAM

1.9 V

1.7 V

多库页面突发

18.5 mm

11 mm

N/A

-

YES

260

1.3 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.79

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

85 °C

GS81314PT19GK-933

8388608 words

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

SYNCHRONOUS

8MX18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

12 Weeks

YES

260

10

GSI技术

GSI技术

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

-55 °C

未说明

125 °C

有

GS81314LQ19GK-800M

8388608 words

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

MILITARY

SYNCHRONOUS

8MX18

2.3 mm

18

SRAM

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

SRAM

22 mm

14 mm

N/A

-

165

表面贴装

1.9 V

36 Bit

8 MWords

Synchronous

1.7 V

1.8 V

BGA

350 MHz

Military grade

-55 to 125 °C

1

Pipelined

8M x 36

21 Bit

288 Mbit

Military

N/A

-

Axial

260

Axial

Stackpole Electronics Inc

Bulk

活跃

725 MHz

BGA

DDR

1.3500 V

Synchronous

2 MWords

36 Bit

表面贴装

Commercial grade

-55°C ~ 155°C

CF

0.177 Dia x 0.433 L (4.50mm x 11.00mm)

±5%

2

0/ -400ppm/°C

200 Ohms

碳膜

1W

-

Pipelined

72 Mbit

Commercial

Flame Retardant Coating, Safety

-

N/A

-

8 Weeks

Free Hanging (In-Line)

BGA-165

YES

-

165

铝合金

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

ITT Cannon, LLC

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182S09BD-400I

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

50V

Bulk

Metal

CA310

活跃

Gold

400 MHz

-55°C ~ 125°C

MIL-DTL-5015, CA-B

e0

无

Crimp

3A991.B.2.B

Plug, Male Pins

14

Tin/Lead (Sn/Pb)

Black

流水线结构

8542.32.00.41

反向卡口锁

22A

CMOS

BOTTOM

N (Normal)

BALL

-

未说明

1

IP67 - Dust Tight, Waterproof

1 mm

not_compliant

黑锌钴

22-19

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

-

730 mA

Pipelined

2 M x 9

1.4 mm

9

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

Strain Relief

15 mm

13 mm

19.7µin (0.50µm)

N/A

-

260

725 MHz

BGA

DDR

1.3500 V

Synchronous

4 MWords

18 Bit

表面贴装

Industrial grade

-40 to 85 °C

Pipelined

72 Mbit

Industrial