GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	安装类型	包装/外壳	表面安装	越来越多的功能	引脚数	外壳材料	供应商器件包装	终端数量																	厂商																																			操作温度	包装	系列	尺寸/尺寸	容差	JESD-609代码	无铅代码	终止次数	终端	ECCN 代码	温度系数	连接器类型	类型	电阻	定位的数量	端子表面处理	最高工作温度	最小工作温度	组成	颜色	功率(瓦特)	附加功能	HTS代码	紧固类型	子类别	额定电流	技术	端子位置	方向	终端形式	屏蔽/屏蔽	峰值回流焊温度（摄氏度）	功能数量	入口保护	端子间距	Reach合规守则	外壳完成	外壳尺寸-插入	JESD-30代码	资历状况	失败率	温度等级	内存大小	端口的数量	操作模式	外壳尺寸，MIL	电源电流-最大值	访问时间	建筑学	组织结构	内存宽度	地址总线宽度	产品类别	密度	并行/串行	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	输出启用
GS84018CGB-150	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	YES	119	网格排列		256000	PLASTIC/EPOXY	未说明	70 °C	有	GS84018CGB-150	262144 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.18							+ 70 C	3.6 V	0 C	84	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	有	150 MHz	BGA,		Tray	GS84018CGB							3A991.B.2.B			Pipeline/Flow Through									IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE			Memory & Data Storage		CMOS	BOTTOM		BALL		未说明	1		1.27 mm	compliant			R-PBGA-B119			COMMERCIAL	4 Mbit		SYNCHRONOUS		120 mA, 130 mA	7.5 ns		256 k x 18	1.99 mm	18		SRAM		4718592 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V					SRAM		22 mm	14 mm
GS81313LT36GK-675	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	260	1.25 V	HBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.74									HBGA,	GRID ARRAY, HEAT SINK/SLUG	4000000	PLASTIC/EPOXY	85 °C	GS81313LT36GK-675	4194304 words										3A991.B.2.B												IT ALSO OPERATES AT 1.15 TO 1.3 V SUPPLY VOLTAGE	8542.32.00.41				CMOS	BOTTOM		BALL			1		1 mm	compliant			R-PBGA-B260			OTHER			SYNCHRONOUS					4MX36	2.3 mm	36				150994944 bit		PARALLEL		DDR SRAM		1.35 V	1.2 V							22 mm	14 mm
GS81313HD18GK-833	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-260	YES	260						833 MHz	+ 85 C	1.35 V	0 C	1.2 V	SMD/SMT	Parallel	HBGA,	GRID ARRAY, HEAT SINK/SLUG	8000000	PLASTIC/EPOXY	85 °C	GS81313HD18GK-833	8388608 words	1.25 V	HBGA		RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.75				GS81313HD18GK							3A991.B.2.B													8542.32.00.41				CMOS	BOTTOM		BALL			1		1 mm	compliant			R-PBGA-B260			OTHER	144 Mbit		SYNCHRONOUS		1.9 A			8 M x 18	2.3 mm	18				150994944 bit		PARALLEL		DDR SRAM		1.35 V	1.2 V							22 mm	14 mm
GS8160Z18BT-200	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	70 °C	GS8160Z18BT-200	1048576 words	2.5 V	LQFP	RECTANGULAR	Rochester Electronics LLC	接触制造商	ROCHESTER ELECTRONICS LLC	5.66									LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	6.5 ns										3A991.B.2.A												FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41				CMOS	QUAD		鸥翼			1		0.65 mm	unknown			R-PQFP-G100			COMMERCIAL			SYNCHRONOUS					1MX18	1.6 mm	18				18874368 bit		PARALLEL		ZBT SRAM		2.75 V	2.25 V							20 mm	14 mm
GS8342Q18AE-250I	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	165	165		BGA,	网格排列	2000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8342Q18AE-250I	2097152 words	1.8 V	BGA	RECTANGULAR	GSI技术	Obsolete		GSI TECHNOLOGY	5.71	BGA												无			3A991.B.2.B												流水线结构	8542.32.00.41				CMOS	BOTTOM		BALL		未说明	1		1 mm	compliant			R-PBGA-B165	不合格		INDUSTRIAL			SYNCHRONOUS					2MX18	1.5 mm	18				37748736 bit		PARALLEL		DDR SRAM		1.95 V	1.7 V							17 mm	15 mm
GS880Z36BGT-200	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	FLATPACK, LOW PROFILE	256000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS880Z36BGT-200	262144 words	2.5 V	LQFP	RECTANGULAR	Rochester Electronics LLC	接触制造商	ROCHESTER ELECTRONICS LLC		5.62								LQFP,										3A991.B.2.A												FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41				CMOS	QUAD		鸥翼		未说明	1		0.65 mm	unknown			R-PQFP-G100			COMMERCIAL			SYNCHRONOUS					256KX36	1.6 mm	36				9437184 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V							20 mm	14 mm
GS880Z36BT-333I	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	GS880Z36BT-333I	262144 words	2.5 V	LQFP	RECTANGULAR	Rochester Electronics LLC	接触制造商	ROCHESTER ELECTRONICS LLC	5.62	PLASTIC/EPOXY	256000	FLATPACK, LOW PROFILE	LQFP,									-40 °C	4.5 ns	85 °C										3A991.B.2.A												FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41				CMOS	QUAD		鸥翼			1		0.65 mm	unknown			R-PQFP-G100			INDUSTRIAL			SYNCHRONOUS					256KX36	1.6 mm	36				9437184 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V							20 mm	14 mm
GS880Z36BT-150I	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	PLASTIC/EPOXY	-40 °C	7.5 ns	85 °C	GS880Z36BT-150I	262144 words	2.5 V	LQFP	RECTANGULAR	Rochester Electronics LLC	接触制造商	ROCHESTER ELECTRONICS LLC	5.62									LQFP,	FLATPACK, LOW PROFILE	256000										3A991.B.2.A												FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41				CMOS	QUAD		鸥翼			1		0.65 mm	unknown			R-PQFP-G100			INDUSTRIAL			SYNCHRONOUS					256KX36	1.6 mm	36				9437184 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V							20 mm	14 mm
GS4576C09GM-33	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	144	PLASTIC/EPOXY	未说明	95 °C	有	GS4576C09GM-33	67108864 words	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.09									LBGA,	GRID ARRAY, LOW PROFILE	64000000																				Beige		自动刷新					CMOS	BOTTOM		BALL		未说明	1		1 mm	compliant			R-PBGA-B144			OTHER		1	SYNCHRONOUS					64MX9	1.25 mm	9				603979776 bit				DDR DRAM		1.9 V	1.7 V		多库页面突发					18.5 mm	11 mm
GS4576C18GM-18	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	144	PLASTIC/EPOXY	未说明	95 °C	有	GS4576C18GM-18	33554432 words	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.09									LBGA,	GRID ARRAY, LOW PROFILE	32000000																						自动刷新					CMOS	BOTTOM		BALL		未说明	1		1 mm	compliant			R-PBGA-B144			OTHER		1	SYNCHRONOUS					32MX18	1.25 mm	18				603979776 bit				DDR DRAM		1.9 V	1.7 V		多库页面突发					18.5 mm	11 mm
GS81314PT19GK-933	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	260	1.3 V	HBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.79									HBGA,	GRID ARRAY, HEAT SINK/SLUG	8000000	PLASTIC/EPOXY	85 °C	GS81314PT19GK-933	8388608 words										3A991.B.2.B													8542.32.00.41				CMOS	BOTTOM		BALL			1		1 mm	compliant			R-PBGA-B260			OTHER			SYNCHRONOUS					8MX18	2.3 mm	18				150994944 bit		PARALLEL		DDR SRAM		1.35 V	1.25 V							22 mm	14 mm
GS81313LD36GK-833	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-260	YES	260	活跃	GSI TECHNOLOGY	5.75							Parallel	SMD/SMT	1.2 V	0 C	1.35 V	+ 85 C	833 MHz	BGA,	网格排列	4000000	PLASTIC/EPOXY	未说明	85 °C	有	GS81313LD36GK-833	4194304 words		1.25 V	BGA	RECTANGULAR	GSI技术			GS81313LD36GK							3A991.B.2.B													8542.32.00.41				CMOS	BOTTOM		BALL		未说明	1		1 mm	compliant			R-PBGA-B260			OTHER	144 Mbit		SYNCHRONOUS		2.55 A			4 M x 36	2.3 mm	36				150994944 bit		PARALLEL		DDR SRAM		1.35 V	1.2 V							22 mm	14 mm
GS880Z36BGT-200IV	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	LQFP,	FLATPACK, LOW PROFILE	256000	PLASTIC/EPOXY	-40 °C	6.5 ns	85 °C	GS880Z36BGT-200IV	262144 words	1.8 V	LQFP	RECTANGULAR	Rochester Electronics LLC	接触制造商	ROCHESTER ELECTRONICS LLC		5.62								Non-Compliant										3A991.B.2.A							85 °C	-40 °C				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41				CMOS	QUAD		鸥翼			1		0.65 mm	unknown			R-PQFP-G100			INDUSTRIAL		4	SYNCHRONOUS					256KX36	1.6 mm	36	18 b		9 Mb	9437184 bit		PARALLEL		ZBT SRAM		2 V	1.7 V							20 mm	14 mm		无
GS81313LQ36GK-625	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	260	HBGA,	GRID ARRAY, HEAT SINK/SLUG	4000000	PLASTIC/EPOXY	未说明	85 °C	有	GS81313LQ36GK-625	4194304 words	1.2 V	HBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY		5.75								Non-Compliant										3A991.B.2.B													8542.32.00.41				CMOS	BOTTOM		BALL		未说明	1		1 mm	compliant			R-PBGA-B260			OTHER			SYNCHRONOUS					4MX36	2.3 mm	36				150994944 bit		PARALLEL		QDR SRAM		1.3 V	1.15 V							22 mm	14 mm
GS81314PQ19GK-933I	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	260	GSI技术	活跃	GSI TECHNOLOGY	5.72									HBGA,	GRID ARRAY, HEAT SINK/SLUG	8000000	PLASTIC/EPOXY	GS81314PQ19GK-933I	8388608 words	1.3 V	HBGA	RECTANGULAR										3A991.B.2.B													8542.32.00.41				CMOS	BOTTOM		BALL			1		1 mm	compliant			R-PBGA-B260						SYNCHRONOUS					8MX18	2.3 mm	18				150994944 bit		PARALLEL		DDR SRAM		1.35 V	1.25 V							22 mm	14 mm
GS8673ET36BGK-725	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	Axial	260	Axial	Stackpole Electronics Inc		Bulk	活跃	725 MHz	BGA	DDR	1.3500 V	Synchronous	2 MWords	36 Bit	表面贴装	Commercial grade						-55°C ~ 155°C		CF	0.177 Dia x 0.433 L (4.50mm x 11.00mm)	±5%			2			0/ -400ppm/°C			200 Ohms					碳膜		1W																				-								Pipelined						72 Mbit		Commercial									Flame Retardant Coating, Safety			-
GS8182S09BD-400I	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	Free Hanging (In-Line)	BGA-165	YES	-	165	铝合金	165	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	9 Bit	1.9 V	表面贴装	ITT Cannon, LLC	400 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8182S09BD-400I	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.19	BGA	Industrial grade		50V	Bulk	Metal	CA310	活跃	Gold	400 MHz	-55°C ~ 125°C		MIL-DTL-5015, CA-B			e0	无		Crimp	3A991.B.2.B		Plug, Male Pins			14	Tin/Lead (Sn/Pb)				Black		流水线结构	8542.32.00.41	反向卡口锁		22A	CMOS	BOTTOM	N (Normal)	BALL	-	未说明	1	IP67 - Dust Tight, Waterproof	1 mm	not_compliant	黑锌钴	22-19	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	-	730 mA		Pipelined	2 M x 9	1.4 mm	9	20 Bit		18 Mbit	18874368 bit	Industrial	PARALLEL	DDR SRAM		1.9 V	1.7 V	Strain Relief			15 mm	13 mm	19.7µin (0.50µm)
GS84018CB-200	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	YES	119	活跃	GSI TECHNOLOGY	5.72							76.354.2528.0	Wieland	Parallel	SMD/SMT	2.3 V	0 C	3.6 V	+ 70 C	200 MHz	BGA,	网格排列	256000	PLASTIC/EPOXY	未说明	70 °C	无		262144 words	2.5 V	BGA	RECTANGULAR										3A991.B.2.B												IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE					CMOS	BOTTOM		BALL		未说明	1		1.27 mm	compliant			R-PBGA-B119			COMMERCIAL	4 Mbit		SYNCHRONOUS		130 mA, 155 mA	6.5 ns		256 k x 18	1.99 mm	18				4718592 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V							22 mm	14 mm
GS8128036GT-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	YES	100	4194304 words	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.71							Details	250 MHz	Parallel	2.3 V	0 C	+ 85 C	SMD/SMT	SDR	有	15	SyncBurst	3.6 V	LQFP,	FLATPACK, LOW PROFILE	4000000	PLASTIC/EPOXY		85 °C	GS8128036GT-250V		Tray	GS8128036GT							3A991.B.2.B			Pipeline/Flow Through									IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE	8542.32.00.41				CMOS	QUAD		鸥翼			1		0.65 mm	compliant			R-PQFP-G100			OTHER	144 Mbit		SYNCHRONOUS		380 mA, 470 mA	5.5 ns		4 M x 36	1.6 mm	36				150994944 bit		PARALLEL		缓存SRAM		2 V	1.7 V							20 mm	14 mm
GS8128018GT-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	YES	100	TQFP100,.4X.6,26	6.5 ns	GS8128018GT-200I	200 MHz	8388608 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.73							Details	200 MHz	Parallel	2.3 V	- 40 C	+ 100 C	SMD/SMT	SDR	有	15	SyncBurst	3.6 V	LQFP, TQFP100,.4X.6,26	FLATPACK, LOW PROFILE	8000000	PLASTIC/EPOXY			Tray	GS8128018GT							3A991.B.2.B			Pipeline/Flow Through									PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY	8542.32.00.41				CMOS	QUAD		鸥翼			1		0.65 mm	compliant			R-PQFP-G100				144 Mbit	1	SYNCHRONOUS		315 mA, 380 mA	6.5 ns		8 M x 18	1.6 mm	18				150994944 bit		PARALLEL	CONFIGURABLE	缓存SRAM	2.3 V	2.7 V	2.3 V	YES			NO			20 mm	14 mm
GS8162Z18DGD-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	6 Weeks	BGA-165	YES	165	165	- 40 C	1.7 V	Parallel	150 MHz	Details	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V		Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	2.7 V	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	有	GS8162Z18DGD-150IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	1.66	BGA	Industrial grade					NBT SRAM	18	有	SDR	SMD/SMT	+ 85 C	-40 to 100 °C	Tray	GS8162Z18DGD							3A991.B.2.B			NBT Pipeline/Flow Through									FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41				CMOS	BOTTOM		BALL		未说明	1		1 mm	compliant			R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit	2	SYNCHRONOUS		180 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18	1.4 mm	18	20 Bit		18 Mbit	18874368 bit	Industrial	PARALLEL		ZBT SRAM	2 V	1.7 V				15 mm	13 mm
GS8673EQ18BGK-725I	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	260				725 MHz	BGA	QDR	1.3500 V	Synchronous	4 MWords	18 Bit	表面贴装	Industrial grade							-40 to 85 °C																																																Pipelined				21 Bit		72 Mbit		Industrial
GS8322Z72GC-225	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-209	209						142.8@Flow-Through/225@Pipelined MHz	2.5, 3.3 V	2.3, 3 V	Synchronous	72 Bit	2.7, 3.6 V	有	225 MHz	+ 70 C	3.6 V	0 C	14	2.3 V	SMD/SMT	Parallel	GSI技术		GSI技术	NBT SRAM	Details	SDR			0 to 70 °C	Tray	GS8322Z72GC										NBT Pipeline/Flow Through												Memory & Data Storage																		36 Mbit				255 mA, 350 mA	7@Flow-Through/3@Pip		512 k x 72			19 Bit	SRAM		36												SRAM
GS81314LQ19GK-800M	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	YES	260		10	GSI技术	GSI技术	HBGA,	GRID ARRAY, HEAT SINK/SLUG	8000000	PLASTIC/EPOXY	-55 °C	未说明	125 °C	有	GS81314LQ19GK-800M	8388608 words	1.3 V	HBGA	RECTANGULAR		活跃	GSI TECHNOLOGY	5.72																														Memory & Data Storage		CMOS	BOTTOM		BALL		未说明	1		1 mm	compliant			R-PBGA-B260			MILITARY			SYNCHRONOUS					8MX18	2.3 mm	18		SRAM		150994944 bit		PARALLEL		DDR SRAM		1.35 V	1.25 V					SRAM		22 mm	14 mm
GS8673ET18BGK-725	GSI	数据表	N/A	-	最小起订量: 1 最小包装量: 1	260				725 MHz	BGA	DDR	1.3500 V	Synchronous	4 MWords	18 Bit	表面贴装	Commercial grade							0 to 70 °C																																																Pipelined						72 Mbit		Commercial