参数名
参数值
参数名
参数值
触点镀层
Gold
包装/外壳
SOT-262A
房屋材料
Polyester
PCB安装方向
Vertical
Contact Materials
Bronze
RoHS
Non-Compliant
Vds - Drain-Source Breakdown Voltage
125 V
Vgs th - Gate-Source Threshold Voltage
7 V
Pd - Power Dissipation
500 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 200 C
Vgs - Gate-Source Voltage
20 V
Unit Weight
0.001058 oz
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
SMD/SMT
Manufacturer
Advanced Semiconductor, Inc.
Brand
Advanced Semiconductor, Inc.
Rds On - Drain-Source Resistance
300 mOhms
Id - Continuous Drain Current
18 A
包装
Tray
终端
Solder
定位的数量
32
子类别
MOSFETs
技术
Si
方向
Vertical
工作频率
225 MHz
房屋颜色
Green
引线长度
3.1 mm
配置
Single
弱电
Compliant
产品类别
射频MOSFET晶体管
可堆叠
有
产品类别
射频MOSFET晶体管
可燃性等级
UL94 V-0