Advanced MRF151GB

包装/外壳

SOT-262A

Vds - Drain-Source Breakdown Voltage

125 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

500 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

40 V

Unit Weight

0.001058 oz

Minimum Operating Temperature

- 65 C

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Id - Continuous Drain Current

40 A

包装

Tray

类型

射频功率MOSFET

子类别

MOSFETs

技术

Si

工作频率

175 MHz

配置

Dual

产品类别

射频MOSFET晶体管

产品类别

射频MOSFET晶体管