Advanced MRF581A

包装/外壳

Macro-X

Emitter- Base Voltage VEBO

2.5 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

90

Unit Weight

0.003527 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

15 V

包装

Tray

类型

射频双极小信号

子类别

Transistors

技术

Si

工作频率

1 GHz

产品类别

射频双极晶体管

晶体管类型

Bipolar

连续集电极电流

200 mA

产品类别

射频双极晶体管