Advanced Power Technology APT100GF60JR
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APT100GF60JR
42-APT100GF60JR
晶体管 - IGBT - 单个
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大陆
立即发货

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
1最小包装量--
APT100GF60JR详情
Advanced Power Technology APT100GF60JR重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
NO
终端数量
4
晶体管元件材料
SILICON
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PUFM-X4
Turn-on Time-Nom (ton)
220 ns
Turn-off Time-Nom (toff)
495 ns
Package Style
FLANGE MOUNT
Package Shape
RECTANGULAR
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Number of Elements
1
ECCN 代码
EAR99
端子位置
UPPER
终端形式
UNSPECIFIED
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PUFM-X4
资历状况
不合格
配置
SINGLE
箱体转运
ISOLATED
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
最大耗散功率(Abs)
500 W
集电极电流-最大值(IC)
100 A
集电极-发射器电压-最大值
600 V
栅极-发射极电压-最大值
20 V
APT100GF60JR拓展信息
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哦! 它是空的。