Advanced Power Technology APT50GL60BN
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APT50GL60BN
42-APT50GL60BN
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247
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APT50GL60BN详情
Advanced Power Technology APT50GL60BN重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Rise Time-Max (tr)
100 ns
Turn-off Time-Max (toff)
85 ns
Turn-off Time-Nom (toff)
55 ns
Turn-on Time-Max (ton)
30 ns
Turn-on Time-Nom (ton)
15 ns
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
附加功能
低导通损耗
HTS代码
8541.29.00.95
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE
箱体转运
COLLECTOR
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247
最大耗散功率(Abs)
200 W
集电极电流-最大值(IC)
50 A
集电极-发射器电压-最大值
600 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2.5 V
栅极-发射极Thr电压-最大值
6 V
环境耗散-最大值
200 W
最大下降时间 (tf)
700 ns
APT50GL60BN拓展信息
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology







哦! 它是空的。