AMI Semiconductor FDMS86183

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-PQFN (5x6), Power56

RoHS

Non-Compliant

Power Dissipation (Max)

63W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 90µA

Current - Continuous Drain (Id) @ 25℃

51A (Tc)

Other Names

FDMS86183CT

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

包装

Cut Tape (CT)

操作温度

-55°C ~ 150°C (TJ)

系列

PowerTrench®

湿度敏感性等级(MSL)

1 (Unlimited)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

12.8 mOhm @ 16A, 10V

输入电容(Ciss)(Max)@Vds

1515pF @ 50V

门极电荷(Qg)(最大)@Vgs

14nC @ 6V

漏源电压 (Vdss)

100V

Vgs（最大值）

±20V

场效应管特性

-