AMI Semiconductor FQPF20N06

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220F

Power Dissipation (Max)

30W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Continuous Drain (Id) @ 25℃

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

系列

QFET®

湿度敏感性等级(MSL)

1 (Unlimited)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

60 mOhm @ 7.5A, 10V

输入电容(Ciss)(Max)@Vds

590pF @ 25V

门极电荷(Qg)(最大)@Vgs

15nC @ 10V

漏源电压 (Vdss)

60V

Vgs（最大值）

±25V

场效应管特性

-