AMI Semiconductor FQU6N40CTU

安装类型

通孔

包装/外壳

TO-251-3 Short Leads, IPak, TO-251AA

供应商器件包装

I-PAK

RoHS

Non-Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Continuous Drain (Id) @ 25℃

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2.5W (Ta), 48W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

QFET®

包装

Tube

湿度敏感性等级(MSL)

1 (Unlimited)

性别

Female

技术

MOSFET (Metal Oxide)

触点样式

Socket

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1 Ohm @ 2.25A, 10V

输入电容(Ciss)(Max)@Vds

625pF @ 25V

门极电荷(Qg)(最大)@Vgs

20nC @ 10V

漏源电压 (Vdss)

400V

Vgs（最大值）

±30V

场效应管特性

-