A Power microelectronics AP2302BI
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AP2302BI
1604-AP2302BI
晶体管 - FET,MOSFET - 单个
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20V 2.3A 700mW 43mΩ@4.5V,2A 660mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
1最小包装量--
AP2302BI详情
A Power microelectronics AP2302BI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Power Dissipation (Pd)
700mW
Drain Source On Resistance (RDS(on)@Vgs,Id)
43mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)@Id)
660mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
29pF@10V
Input Capacitance (Ciss@Vds)
280pF@10V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
2.3A
AP2302BI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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