A Power microelectronics AP3P06MI
- 收藏
- 对比
AP3P06MI
1604-AP3P06MI
晶体管 - FET,MOSFET - 单个
--
大陆
立即发货

60V 3.8A 1.5W 125mΩ@10V,1.5A 1.7V@250uA 1 Piece P-Channel SOT-23-3L MOSFETs ROHS
1最小包装量--
AP3P06MI详情
A Power microelectronics AP3P06MI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Power Dissipation (Pd)
1.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)
125mΩ@10V,1.5A
Gate Threshold Voltage (Vgs(th)@Id)
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds)
38pF@15V
Input Capacitance (Ciss@Vds)
531pF@15V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 Piece P-Channel
Continuous Drain Current (Id)
3.8A
AP3P06MI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
A Power microelectronics
A Power microelectronics
A Power microelectronics
A Power microelectronics
A Power microelectronics
A Power microelectronics
A Power microelectronics








哦! 它是空的。