A Power microelectronics AP60N02BD
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AP60N02BD
1604-AP60N02BD
晶体管 - FET,MOSFET - 单个
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20V 60A 37W 4.8mΩ@4.5V,30A 700mV@250uA 1 N-Channel TO-252-3 MOSFETs ROHS
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AP60N02BD详情
A Power microelectronics AP60N02BD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Power Dissipation (Pd)
37W
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.8mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)@Id)
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
271pF@10V
Input Capacitance (Ciss@Vds)
1.832nF@10V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
60A
AP60N02BD拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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哦! 它是空的。