A Power microelectronics AP5N30D
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AP5N30D
1604-AP5N30D
晶体管 - FET,MOSFET - 单个
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300V 5A 58.7W 1.2Ω@10V,2.5A 3.2V@250uA 1 N-Channel TO-252-3L MOSFETs ROHS
1最小包装量--
AP5N30D详情
A Power microelectronics AP5N30D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
300V
Power Dissipation (Pd)
58.7W
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.2Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)@Id)
3.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)
7pF@25V
Input Capacitance (Ciss@Vds)
291pF@25V
Total Gate Charge (Qg@Vgs)
8.4nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
5A
AP5N30D拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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哦! 它是空的。