Atmel (Microchip Technology) APT60GA60JD60

包装/外壳

SOT-227-4

RoHS

Details

Collector- Emitter Voltage VCEO Max

600 V

Collector-Emitter Saturation Voltage

2 V

Continuous Collector Current at 25 C

112 A

Gate-Emitter Leakage Current

100 nA

Pd - Power Dissipation

356 W

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Maximum Gate Emitter Voltage

30 V

Mounting Styles

底座安装

Factory Pack QuantityFactory Pack Quantity

1

Tradename

POWER MOS 8, ISOTOP

Unit Weight

1.058219 oz

包装

Tube

配置

Single

工作温度范围

- 55 C to + 150 C

产品

IGBT硅模块

高度

9.6 mm

长度

38.2 mm

宽度

25.4 mm