Atmel (Microchip Technology) APT60GT60JRD
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APT60GT60JRD
225-APT60GT60JRD
晶体管 - IGBT - 模块
SOT-227-4
大陆
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IGBT Modules FG, IGBT-COMBI, 600V, 60A, SOT-227View in Development Tools Selector
1最小包装量--
APT60GT60JRD详情
Atmel (Microchip Technology) APT60GT60JRD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-227-4
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2 V
Continuous Collector Current at 25 C
93 A
Gate-Emitter Leakage Current
100 nA
Pd - Power Dissipation
378 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Styles
螺钉安装
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
2 oz
包装
Tube
配置
Single
产品
IGBT硅模块
APT60GT60JRD拓展信息
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)
Atmel (Microchip Technology)







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