Atmel (Microchip Technology) APTGT30H60T1G
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APTGT30H60T1G
225-APTGT30H60T1G
晶体管 - IGBT - 模块
SP1-12
大陆
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IGBT Modules DOR CC8008View in Development Tools Selector
1最小包装量--
APTGT30H60T1G详情
Atmel (Microchip Technology) APTGT30H60T1G重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
包装/外壳
SP1-12
Maximum Gate Emitter Voltage
20 V
Mounting Styles
底座安装
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
2.821917 oz
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Pd - Power Dissipation
90 W
Gate-Emitter Leakage Current
300 nA
Continuous Collector Current at 25 C
50 A
Collector-Emitter Saturation Voltage
1.5 V
Collector- Emitter Voltage VCEO Max
600 V
RoHS
Details
包装
Tube
配置
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APTGT30H60T1G拓展信息
Atmel (Microchip Technology)
Atmel (Microchip Technology)
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Atmel (Microchip Technology)
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