Central 2N2222A TIN/LEAD

底架

Panel

包装/外壳

TO-18-3

RoHS

Non-Compliant

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

500 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

35 at 0.1 mA, 10 V

Collector-Emitter Saturation Voltage

300 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

300 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

-

DC Current Gain hFE Max

300 at 150 mA, 10 V

Collector- Emitter Voltage VCEO Max

40 V

系列

2N2222A

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

消耗功率

8.5 W

集电极基极电压(VCBO)

75 V

连续集电极电流

800 mA

产品类别

Bipolar Transistors - BJT