Central 2N2369A TIN/LEAD

包装/外壳

TO-18-3

Emitter- Base Voltage VEBO

4.5 V

Pd - Power Dissipation

360 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40 at 10 mA, 1 V

Collector-Emitter Saturation Voltage

200 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

500 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

500 mA

DC Current Gain hFE Max

120 at 10 mA, 1 V

RoHS

N

Collector- Emitter Voltage VCEO Max

15 V

系列

2N2369A

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

40 V

连续集电极电流

200 mA

产品类别

Bipolar Transistors - BJT