Central 2N2907A TIN/LEAD

包装/外壳

TO-18-3

表面安装

NO

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

400 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

75 at 0.1 mA, 10 V

Collector-Emitter Saturation Voltage

400 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

200 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

-

DC Current Gain hFE Max

300 at 150 mA, 10 V

RoHS

N

Collector- Emitter Voltage VCEO Max

60 V

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

无

Transition Frequency-Nom (fT)

200 MHz

Manufacturer Part Number

2N2907ATIN/LEAD

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.87

系列

2N2907

包装

Bulk

JESD-609代码

e0

端子表面处理

锡铅

子类别

Transistors

技术

Si

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

配置

Single

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

60 V

最大耗散功率(Abs)

0.4 W

集电极电流-最大值(IC)

0.6 A

最小直流增益（hFE）

100

连续集电极电流

600 mA

碎片的数量

1

产品类别

Bipolar Transistors - BJT

长度

200mm