Central 2N2926 TIN/LEAD

包装/外壳

TO-92-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

-

Transistor Polarity

NPN

DC Collector/Base Gain hfe Min

35

Collector-Emitter Saturation Voltage

-

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

通孔

Gain Bandwidth Product fT

120 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

-

DC Current Gain hFE Max

470

RoHS

N

Collector- Emitter Voltage VCEO Max

25 V

系列

BK86

包装

Bulk

子类别

Transistors

技术

Si

效率

≤95 %

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

25 V

负载类型

可编程

产品类别

Bipolar Transistors - BJT