Central 2N3019 TIN/LEAD

包装/外壳

TO-39-3

Emitter- Base Voltage VEBO

7 V

Pd - Power Dissipation

800 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

50 at 100 uA, 10 V

Collector-Emitter Saturation Voltage

200 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Gain Bandwidth Product fT

100 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

-

DC Current Gain hFE Max

300 at 150 mA, 10 V

RoHS

N

Collector- Emitter Voltage VCEO Max

80 V

系列

2N3019

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

140 V

连续集电极电流

1 A

产品类别

Bipolar Transistors - BJT