Central 2N4036 TIN/LEAD

包装/外壳

TO-39-3

Emitter- Base Voltage VEBO

7 V

Pd - Power Dissipation

5 W

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

20 at 0.1 mA, 10 V

Collector-Emitter Saturation Voltage

650 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Gain Bandwidth Product fT

60 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

-

DC Current Gain hFE Max

140 at 150 mA, 10 V

RoHS

N

Collector- Emitter Voltage VCEO Max

65 V

系列

2N4036

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

90 V

连续集电极电流

1 A

产品类别

Bipolar Transistors - BJT