Central 2N5551 APP TIN/LEAD

包装/外壳

TO-92-3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

1 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

50 at 10 V, 1 mA

Collector-Emitter Saturation Voltage

200 mV

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Gain Bandwidth Product fT

300 MHz

Collector- Emitter Voltage VCEO Max

160 V

系列

2N5551

技术

Si

配置

Single

集电极基极电压(VCBO)

180 V