Central 2N5551 PBFREE

包装/外壳

TO-92-3

材料

Polyamide with Thermoplastic Elastomer

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

625 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

80

Collector-Emitter Saturation Voltage

200 mV

Unit Weight

0.016000 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

通孔

Gain Bandwidth Product fT

300 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

600 mA

DC Current Gain hFE Max

250

RoHS

Details

Collector- Emitter Voltage VCEO Max

160 V

系列

2N55

包装

Bulk

颜色

Black

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

180 V

连续集电极电流

600 mA

产品类别

Bipolar Transistors - BJT