Central 2N5822 TIN/LEAD

包装/外壳

TO-92-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

625 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

100 at 2 mA, 2 V

Collector-Emitter Saturation Voltage

1.2 V

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

120 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

1 A

DC Current Gain hFE Max

250 at 2 mA, 2 V

RoHS

N

Collector- Emitter Voltage VCEO Max

60 V

系列

2N5822

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

70 V

连续集电极电流

750 mA

产品类别

Bipolar Transistors - BJT