Central 2N6261 PBFREE

包装/外壳

TO-66-2

Pd - Power Dissipation

50 W

Transistor Polarity

NPN

DC Collector/Base Gain hfe Min

25 at 1.5 A

Collector-Emitter Saturation Voltage

500 mV

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Gain Bandwidth Product fT

800 kHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

DC Current Gain hFE Max

100 at 1.5 A

RoHS

Details

Collector- Emitter Voltage VCEO Max

80 V

系列

2N62

包装

Tube

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

90 V

连续集电极电流

4 A

产品类别

Bipolar Transistors - BJT