Central MJE371 PBFREE

包装/外壳

TO-126-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

RoHS

Non-Compliant

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

40 W

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

40 at 1 A, 1 V

Collector-Emitter Saturation Voltage

-

Unit Weight

0.026843 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Gain Bandwidth Product fT

-

Part # Aliases

MJE371 SL PBFREE

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

4 A

Collector- Emitter Voltage VCEO Max

40 V

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

MJE371PBFREE

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.68

系列

MJE371

包装

Tube

JESD-609代码

e3

端子表面处理

Matte Tin (Sn)

子类别

Transistors

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

R-PSFM-T3

配置

Single

晶体管应用

SWITCHING

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-126

集电极基极电压(VCBO)

40 V

最大耗散功率(Abs)

40 W

集电极电流-最大值(IC)

4 A

最小直流增益（hFE）

40

连续集电极电流

4 A

集电极-发射器电压-最大值

40 V

产品类别

Bipolar Transistors - BJT