Central MPS6517 PBFREE

包装/外壳

TO-92-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

RoHS

Non-Compliant

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

625 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

90 at 2 mA, 10 V

Collector-Emitter Saturation Voltage

500 mV

Unit Weight

0.016000 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

通孔

Gain Bandwidth Product fT

-

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

100 mA

DC Current Gain hFE Max

180 at 2 mA, 10 V

Collector- Emitter Voltage VCEO Max

40 V

Package Description

CYLINDRICAL, O-PBCY-T3

Package Style

CYLINDRICAL

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

MPS6517PBFREE

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.65

系列

MPS65

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

子类别

Transistors

技术

Si

端子位置

BOTTOM

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-PBCY-T3

配置

Single

晶体管应用

AMPLIFIER

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

JEDEC-95代码

TO-92

集电极基极电压(VCBO)

40 V

最大耗散功率(Abs)

1.5 W

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

60

连续集电极电流

100 mA

集电极-发射器电压-最大值

40 V

VCEsat-最大值

0.5 V

集电极-基极电容-最大值

4 pF

环境耗散-最大值

0.625 W

产品类别

Bipolar Transistors - BJT