Central MPS6520 TIN/LEAD

触点镀层

Lead, Tin

包装/外壳

TO-92-3

RoHS

Compliant

DC Current Gain hFE Max

400 at 2 mA, 10 V

Collector- Emitter Voltage VCEO Max

25 V

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

-

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

625 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

100 at 100 uA, 10 V

Collector-Emitter Saturation Voltage

580 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

通孔

Gain Bandwidth Product fT

300 MHz

包装

Tape & Reel

系列

MPS6520

容差

0.1 %

温度系数

50 ppm/°C

电阻

51.1 kΩ

最高工作温度

125 °C

最小工作温度

-55 °C

组成

Thin Film

子类别

Transistors

额定功率

125 mW

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

40 V

连续集电极电流

100 mA

产品类别

Bipolar Transistors - BJT

辐射硬化

无