Central MPS8599 TIN/LEAD

包装/外壳

TO-92-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

625 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

75 at 5 V, 100 mA

Collector-Emitter Saturation Voltage

400 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

通孔

Gain Bandwidth Product fT

150 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

DC Current Gain hFE Max

300 at 5 V, 1 mA

RoHS

Details

Collector- Emitter Voltage VCEO Max

80 V

系列

MPS8599

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

80 V

连续集电极电流

500 mA

产品类别

Bipolar Transistors - BJT